ds30356 rev. 4 - 1 1 of 4 SBM1040CT www.diodes.com diodes incorporated SBM1040CT 10a surface mount dual schottky barrier rectifier powermite 3 features single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. case: powermite 3 molded plastic plastic material: ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 polarity: see diagram marking: see page 4 weight: 0.072 grams (approx.) mechanical data b c d e g j h k l m a p 12 3 pin 1 pin 2 pin 3, bottomside heat s ink c characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v rms reverse voltage v r(rms) 28 v average rectified output current (also see figure 5) per element total device i o 5 10 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load per package (jedec method), total device t c = 115c i fsm 50 a typical thermal resistance junction to soldering point per element r js 2.5 c/w operating temperature range t j -55 to +150 c storage temperature range t stg -55 to +150 c guard ring die construction for transient protection low power loss, high efficiency low forward voltage drop very low reverse leakage current for use in low voltage, high frequency inverters, or?ing, and polarity protection applications t c u d o r p w e n maximum ratings @ t a = 25 c unless otherwise specified under development powermite 3 dim min max a 4.03 4.09 b 6.40 6.61 c .864 .914 d 1.83 nom e 1.10 1.14 g .173 .203 h 5.01 5.17 j 4.37 4.43 k .173 .203 l .71 .77 m .36 .46 p 1.73 1.83 all dimensions in mm
ds30356 rev. 4 - 1 2 of 4 SBM1040CT www.diodes.com notes: 1. short duration test pulse used to minimize self-heating effect. characteristic symbol min typ max unit test condition reverse breakdown voltage (note 1) v (br)r 40 v i r = 500 a forward voltage (note 1) per element v f 0.45 0.39 0.53 0.50 0.48 0.42 0.575 0.55 v i f = 5a, t j = 25 c i f = 5a, t j = 100 c i f = 10a, t j = 25 c i f = 10a, t j = 100 c reverse current (note 1) per element i r 35 4 10 2 150 10 80 5 a ma a ma v r = 35v, t j = 25c v r = 35v, t j = 100c v r = 17.5v, t j = 25c v r = 17.5v, t j = 100c total capacitance per element c t 375 pf f = 1.0mhz, v r = 4.0v dc electrical characteristics @ t a = 25 c unless otherwise specified t c u d o r p w e n 0 100 200 300 400 600 500 i , instantane o us f o rward current (a) f v , instantaneous forward voltage (mv) f fig. 1 typical forward characteristics, per elemen t 10 1 0.1 0.01 0.001 0.0001 100 t = +125c j t = +100c j t = -25c j t = +25c j 0 5 10 15 20 25 30 40 35 i , instantane o us reverse current ( m a) r v , instantaneous reverse voltage (v) r fig. 2 typical reverse characteristics, per element 10 1 0.1 0.01 0.001 100 t = +125c j t = +100c j t = +25c j under development 100 1000 10 , 000 015 10 25 30 35 20 40 c , total capacitance (pf) t v , reverse voltage (v) r fig. 4 typical capacitance vs. reverse volta g e, per element 5 f=1mhz 0 10 20 30 40 50 11010 0 i , peak f o rward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) t = 115c c total device
ds30356 rev. 4 - 1 3 of 4 SBM1040CT www.diodes.com t c u d o r p w e n notes: 2. t a = t soldering point ,r js = 2.5 c/w, r sa = 0 c/w. 3. device mounted on getek substrate, 2?x2?, 2 oz. copper, double-sided, cathode pad dimensions 0.75? x 1.0?, anode pad dimensions 0.25? x 1.0?. r ja in range of 25-30c/w. 4. device mounted on fr-4 substrate, 2?x2?, 2 oz. copper, single-sided, pad layout as per diodes inc. suggest ed pad layout document ap02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. r ja in range of 95-100c/w. 5. maximum power dissipation when the device is mounted in accordance to the conditions described in note 4. 6. maximum power dissipation when the device is mounted in accordance to the conditions described in note 3. 7. r ja = 10-15c/w when mounted on 2"x2", single-sided, ceramic board with cathode pad dimensions 0.75"x1.0", anode pad dimensions 0.25"x1.0". 8. r ja = 20-25c/w when mounted on 2"x2", single-sided, fr-4 board with cathode pad dimensions 0.5"x1.0", anode pad dimensions 0.5"x1.0", 2 oz. copper pads. 9. r ja = 60-65c/w when mounted on 0.5"x0.625", single-sided, fr-4 board with minimum recommended pad layout. under development 0 1.5 3.0 4.5 7.5 6.0 0 25 50 75 100 125 150 i , dc f o rward current (a) f t , ambient temperature (c) a fig. 5 dc forward current derating, per elemen t note 2 note 3 note 4 0 1.5 3 4.5 6 0 1 3 2 4 5 6 7 8 9 10 p , forward power dissipation (w) f i , forward current (a) f fi g . 6 forward power dissipation, per element t = 125c j note 5 note 6 60 80 70 160 150 140 130 120 110 100 90 0 10 20 30 40 t , derated ambient temperature (c) a v , dc reverse voltage (v) r fig. 7 operating temperature derating, per element note 9 note 7 note 8
ds30356 rev. 4 - 1 4 of 4 SBM1040CT www.diodes.com ordering information notes: 10. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping SBM1040CT-13 powermite 3 5000/tape & reel (note 10) marking information SBM1040CT = product type marking code = manufacturers? code marking yyww = date code marking yy = last digit of year ex: 2 for 2002 ww=weekcode01to52 (k) = factory designator yyww(k) SBM1040CT powermite is a registered trademark of microsemi corporation. t c u d o r p w e n under development
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